IRF3205 datasheet(1/2 Pages) ISC

номер детали	IRF3205

подробное описание детали	isc N-Channel Mosfet Transistor

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INCHANGE Semiconductor

isc Product Specification

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e：

：

： www.iscsemi.com

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& iscsemi is registered trademark

1

isc

N-Channel MOSFET Transistor

IRF3205

FEATURES

·

·Drain Current –ID= 110A@ TC=25℃

·Drain Source Voltage-

: VDSS= 55V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.008Ω(Max)

Description

Advanced HEXFET ® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃

℃

℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

55

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

110

A

IDM

Drain Current-Single Pluse

390

A

PD

Total Dissipation @TC=25℃

200

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.75

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62

℃/W

Аналогичный номер детали - IRF3205

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF3205	92Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
International Rectifier	IRF3205	160Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
Kersemi Electronic Co.,...	IRF3205	4Mb / 12P	Advanced Process Technology Ultra Low On-Resistance
Nell Semiconductor Co.,...	IRF3205	622Kb / 7P	N-Channel Power MOSFET
Thinki Semiconductor Co...	IRF3205	970Kb / 5P	N-Channel Trench Process Power MOSFET Transistor

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