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2SC5810 датащи(PDF) 4 Page - Toshiba Semiconductor |
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2SC5810 датащи(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC5810 2004-07-07 4 rth – tw Collector-emitter voltage VCE (V) Safe Operating Area Pulse width tw (s) 1000 1 0.001 100 10 0.01 0.1 1 10 100 1000 0.003 0.03 0.3 3 30 300 3 30 300 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) 10 0.01 0.1 1 10 100 0.1 1 3 0.3 30 0.03 0.3 3 *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. IC max (pulsed)* DC operation (Ta = 25°C) 10 µs* 100 µs* 1 ms* 100 ms* 10 ms* 10 s* IC max (continuous) |
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