Power Transistors

1

Publication date: February 2003

SJD00289AED

2SC5779

Silicon NPN epitaxial planar type

Power supply for Audio & Visual equipments

such as TVs and VCRs

Industrial equipments such as DC-DC converters

■ Features

• High-speed switching (t

• Low collector-emitter saturation voltage V

CE(sat)

• Superior forward current transfer ratio h

• TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

100

µA

Collector-emitter cutoff current (Base open)

= 50 V, I

B

= 0

100

µA

Emitter-base cutoff current (Collector open)

mA

Forward current transfer ratio

200



= 2 V, I

C

= 7 A

100

Collector-emitter saturation voltage

0.5

V

Transition frequency

150

MHz

Turn-on time

0.5

µs

Storage time

1.0

µs

Fall time

= 40 V

0.15

µs

Internal Connection

B

C

E

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

12

3

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

6V

Collector current

10

A

Peak collector current

20

A

Collector power dissipation

25

W

2.0

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.