IRF440 datasheet(1/2 Pages) ISC

номер детали	IRF440

подробное описание детали	isc N-Channel MOSFET Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF440

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speeds

·IDSS,VDS(on),SOA and VGS(th) specified at Elevated

temperature

·Rugged

APPLICATIONS

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

8

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

Rth j-A

Thermal Resistance,Junction to Ambient

30

℃/W

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Samsung semiconductor	IRF440	211Kb / 5P	N-CHANNEL POWER MOSFETS
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