IRF430 datasheet(1/2 Pages) ISC

номер детали	IRF430

подробное описание детали	isc N-Channel MOSFET Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF430

DESCRIPTION

·silicon Gate for fast switching at elevate

·rugged

·low drive requirements

·ease of paralleling

APPLICATIONS

·high speed applications such as

Switching power supplies,AC and DCmotor controls

relay and solenoid driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

4.5

A

Ptot

Total Dissipation@TC=25℃

75

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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