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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF353 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF353 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF353 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·high voltage,high speed applications such as off-line Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 13 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Аналогичный номер детали - IRF353 |
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Аналогичное описание - IRF353 |
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ссылки URL |
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