2N5667 datasheet(1/2 Pages) MICROSEMI

номер детали	2N5667

подробное описание детали	NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455

PDF	2 Pages

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производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

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TECHNICAL DATA

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

Devices

Qualified Level

Devices

Qualified Level

2N5664

2N5665

JAN

JANTX

JANTXV

2N5666

2N5666S

2N5667

2N5667S

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Symbol

2N5664

2N5666, S

2N5665

2N5667, S Unit

Collector-Emitter Voltage

VCEO

200

300

Vdc

Collector-Base Voltage

VCBO

250

400

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Base Current

IB

1.0

Adc

Collector Current

IC

5.0

Adc

2N5664

2N5665

2N5666, S

2N5667, S

Total Power Dissipation

@ TA = +25

0C

@ TC = +100

0C

PT

2.5

(1)

30

(3)

1.2

(2)

15

(4)

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

1)

Derate linearly 14.3 mW/

0C for TA > +250C

2)

Derate linearly 6.9 mW/

0C for TA > +250C

3)

Derate linearly 300 mW/

0C for TC >+1000C

4)

Derate linearly 150 mW/

0C for TC > +1000C

TO-66* (TO-213AA)

2N5664, 2N5665

TO-5*

2N5666, 2N5667

TO-39* (TO-205AD)

2N5666S, 2N5667S

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

2N5664, 2N5666, S

2N5665, 2N5667, S

V(BR)CER

250

400

Vdc

Emitter-Base Breakdown Voltage

IE = 10 µAdc

V(BR)EBO

6.0

Vdc

Collector-Emitter Cutoff Current

VCE = 200 Vdc

2N5664, 2N5666, S

VCE = 300 Vdc

2N5665, 2N5667, S

ICES

0.2

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

Аналогичный номер детали - 2N5667

производитель	номер детали	датащи	подробное описание детали
Seme LAB	2N5667	26Kb / 3P	NPN BIPOLAR POWER SWITCHING
Microsemi Corporation	2N5667	118Kb / 3P	NPN POWER SILICON SWITCHING TRANSISTOR
New Jersey Semi-Conduct...	2N5667	73Kb / 1P	SILICON PLANAR NPN POWER TRANSISTORS
New Jersey Semi-Conduct...	2N5667	94Kb / 2P	Devices
Seme LAB	2N5667N1	347Kb / 3P	NPN POWER SILICON SWITCHING TRANSISTOR

More results

Аналогичное описание - 2N5667

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	2N3418JAN	55Kb / 2P	NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
	JAN2N6802	1Mb / 9P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
	JAN2N6766	1,006Kb / 9P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
	JANTX2N3743	60Kb / 2P	PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397
	JANTX2N4399	58Kb / 2P	PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
	JANS2N2222A	142Kb / 6P	NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
	JANTX2N5680	57Kb / 2P	PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582
	JANTXV2N6193	60Kb / 2P	PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561
	JANTX2N3902	60Kb / 2P	NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371
	JAN2N6788	677Kb / 7P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

More results

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