DMNH6012SPSQ datasheet(2/7 Pages) DIODES

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DMNH6012SPSQ

Document number: DS38778 Rev. 1 - 2

2 of 7

www.diodes.com

April 2016

DMNH6012SPSQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 7) VGS = 10V

TC = +25°C

TC = +100°C

Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)

IDM

120

Maximum Continuous Body Diode Forward Current (Note 7)

2.6

Avalanche Current, L = 0.1mH (Note 8)

IAS

Avalanche Energy, L = 0.1mH (Note 8)

EAS

100

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

1.6

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Total Power Dissipation (Note 7)

3.1

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case

RθJC

3.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current, TJ = +25°C

IDSS

—

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 50A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

1,926

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

330

—

Reverse Transfer Capacitance

CRSS

—

112

—

Gate Resistance

—

2.0

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

16.3

—

VDS = 30V, ID = 25A

Total Gate Charge (VGS = 10V)

—

35.2

—

Gate-Source Charge

QGS

—

7.6

—

Gate-Drain Charge

QGD

—

6.9

—

Turn-On Delay Time

tD(ON)

—

6.4

—

VGS = 10V, VDS = 30V,

RG = 3Ω, ID = 25A

Turn-On Rise Time

—

11.9

—

Turn-Off Delay Time

tD(OFF)

—

16.5

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

tRR

—



—



IF = 25A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



—



Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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