POWERDI is a registered trademark of Diodes Incorporated.

DMNH4011SPSQ

Document number: DS38693 Rev. 2 - 2

2 of 7

www.diodes.com

April 2016

© Diodes Incorporated

DMNH4011SPSQ

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

12.9

10.8

A

100

A

(Note 8)

65

Maximum Continuous Body Diode Forward Current (Note 6)

2.7

A

Pulsed Drain Current (10

s pulse, duty cycle = 1%)

A

Avalanche Current, L = 1mH

A

Avalanche Energy, L = 1mH

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

2.5

W

Thermal Resistance, Junction to Ambient (Note 6)

60

°C/W

Total Power Dissipation (Note 7)

150

W

Thermal Resistance, Junction to Case (Note 7)

1

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

40

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

8.5

10

mΩ

Diode Forward Voltage

—

0.9

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

1405

—

pF

Output Capacitance

—

247

—

Reverse Transfer Capacitance

—

108

—

Gate Resistance

—

2.2

—

Ω

Total Gate Charge

—

25.5

—

nC

Gate-Source Charge

—

4.6

—

Gate-Drain Charge

—

6.9

—

Turn-On Delay Time

—

4.6

—

ns

Turn-On Rise Time

—

3.7

—

Turn-Off Delay Time

—

16

—

Turn-Off Fall Time

—

5.1

—

Body Diode Reverse Recovery Time

—



22.1

—



ns

Body Diode Reverse Recovery Charge

—



13.4

—



nC

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.