DMNH10H028SCT

Document number: DS38674 Rev. 2 - 2

2 of 7

www.diodes.com

April 2016

© Diodes Incorporated

DMNH10H028SCT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

60

42

A

Pulsed Drain Current (380

s Pulse, Duty Cycle = 1%)

90

A

Maximum Continuous Body Diode Forward Current (Note 5)

2.8

A

Avalanche Current, L = 0.1mH

27

A

Avalanche Energy, L = 0.1mH

37

mJ

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2.8

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

54

°C/W

Thermal Resistance, Junction to Case

1

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

100

—

—

V

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

2.0

2.8

4.0

V

Static Drain-Source On-Resistance

—

19

28

m

Ω

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

1942

—

pF

f = 1MHz

Output Capacitance

—

166

—

pF

Reverse Transfer Capacitance

—

47

—

pF

Gate Resistance

—

1.8

—

Ω

—

25.4

—

nC

—

31.9

—

nC

Gate-Source Charge

—

8.1

—

nC

Gate-Drain Charge

—

6.5

—

nC

Turn-On Delay Time

—

7.1

—

ns

Turn-On Rise Time

—

6.6

—

ns

Turn-Off Delay Time

—

14.0

—

ns

Turn-Off Fall Time

—

3.2

—

ns

Body Diode Reverse Recovery Time

—



35.3

—



ns

Body Diode Reverse Recovery Charge

—



46.8

—



nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.