DMN6070SSD

Document number: DS36342 Rev. 3 - 2

4 of 6

www.diodes.com

January 2015

© Diodes Incorporated

DMN6070SSD

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I= 5A

GS

D

V=

V

I = 10A

GS

D

10

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

T, JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

5

10

15

20

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = -55°C

A

T= 25°C

A

T= 85°C

A

T = 125°C

A

T = 150°C

A

0.001

0.01

0.1

1

10

100

0.1

1

10

100

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150°C

T = 25°C

J(max)

A

V

= -8V

Single Pulse

GS

DUT on 1 * MRP Board

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 Typical Junction Capacitance

1

10

100

1000

10000

010

20

3040

f=1MHz

Q , TOTAL GATE CHARGE (nC)

g

Figure 12 Gate Charge

0

1

2

3

4

5

6

7

8

9

10

02

46

8

10

12

14

V

= 30V

DS

I = 3A

D