DG485DN datasheet(4/11 Pages) VISHAY

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DG485

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

5-4

Document Number: 70065

S-52433—Rev. E, 06-Sep-99

SPECIFICATIONSa

Test Conditions

Unless Otherwise Specified

A Suffix

–55 to 125

D Suffix

–40 to 85

Parameter

Symbol

V+ = 15 V, V– = –15 V

VL = 5 V, VIN = 2.4 V, 0.8 Vf

Tempb

Typc

Mind

Maxd

Mind

Maxd

Unit

Dynamic Characteristics (Cont’d)

Source Off

Capacitancee

CS(off)

Vgen = 0 V, Rgen = 0 W, f = 1 MHz

Room

Drain Off Capacitancee

CD(off)

gen

Room

On-State Capacitancee

CD(on)

Vgen = 0 V, Rgen = 0 W, f = 1 MHz One

Channel On

Room

On-State Capacitancee

CD(on)

Vgen = 0 V, Rgen = 0 W, f = 1 MHz All Chan-

nels On

Room

122

Power Supplies

Positive Supply

Current

I+

V16 5 V V

16 5 V

Room

Full

0.001

Negative Supply

Current

I–

V+ = 16.5 V, V– = –16.5 V

VIN = 0 or 5 V, VL = 5.25 V

Room

Full

–0.001

–3

–10

–3

–10

Logic Supply Current

VIN = 0 or 5 V, VL = 5.25 V

DOUT Open

Room

Full

0.001

Ground Current

IGND

Room

Full

–0.001

–3

–10

–3

–10

Notes:

Refer to PROCESS OPTION FLOWCHART.

Room = 25

_C, Full = as determined by the operating temperature suffix.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

Guaranteed by design, not subject to production test.

VIN = input voltage to perform proper function.

For each V

D :

DS(on) +

DS(on)

MAX – r

DS(on)

MIN

DS(on) AVE

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Supply Currents vs. Temperature

rDS(on) vs. VD and Power Supply Voltage

Temperature (

_C)

VD – Drain Voltage (V)

V+ = 15 V

V– = –15 V

VL = 5 V

IPOS

IGND

–50

–10

130

160

140

–20

–10

120

100

–30

110

1 mA

100 nA

VL = 5 V

IS = –5 mA

"5 V

10 nA

1 nA

100 pA

10 pA

1 pA

0.1 pA

INEG

"8 V

"10 V

"12 V

"15 V

"20 V

–15

–5

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