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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMN6040SSS датащи(PDF) 2 Page - Diodes Incorporated |
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DMN6040SSS датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN6040SSS Document number: DS35709 Rev. 3 - 2 2 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN6040SSS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = 25°C TA = 70°C ID 5.5 4.4 A t<10s TA = 25°C TA = 70°C ID 7.0 5.5 A Maximum Continuous Body Diode Forward Current (Note 6) IS 2.5 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM 30 A Avalanche Current (Note 7) L = 0.1mH IAR 14.2 A Repetitive Avalanche Energy (Note 7) L = 0.1mH EAR 10 mJ Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = 25°C PD 1.5 W TA = 70°C 1 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 80 °C/W t<10s 48 Total Power Dissipation (Note 6) TA = 25°C PD 2.0 W TA = 70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 61 °C/W t<10s 37 Thermal Resistance, Junction to Case RθJC 6.4 Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Electrical Characteristics TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 100 nA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1 ⎯ 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 30 40 m Ω VGS = 10V, ID = 4.5A ⎯ 35 55 VGS = 4.5V, ID = 3.5A Forward Transfer Admittance |Yfs| ⎯ 4.5 ⎯ S VDS = 10V, ID = 4.3A Diode Forward Voltage VSD ⎯ 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 1287 ⎯ pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 57 ⎯ Reverse Transfer Capacitance Crss ⎯ 44 ⎯ Gate Resistance RG ⎯ 1.2 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg ⎯ 22.4 ⎯ nC VDS = 30V, ID = 4.3A Total Gate Charge (VGS = 4.5V) Qg ⎯ 10.4 ⎯ Gate-Source Charge Qgs ⎯ 4.9 ⎯ Gate-Drain Charge Qgd ⎯ 3.0 ⎯ Turn-On Delay Time tD(on) ⎯ 6.6 ⎯ nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A Turn-On Rise Time tr ⎯ 8.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 20.1 ⎯ Turn-Off Fall Time tf ⎯ 4.0 ⎯ Body Diode Reverse Recovery Time trr ⎯ 18 ⎯ nS IS = 4.3A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 11.9 ⎯ nC IS = 4.3A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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