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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMN6040SSD датащи(PDF) 2 Page - Diodes Incorporated |
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DMN6040SSD датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN6040SSD Maximum Ratings (@TA = +25°C unless otherwise specified) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.0 4.1 A t<10s TA = +25°C TA = +70°C ID 6.6 5.3 A Maximum Body Diode Forward Current (Note 6) IS 2.5 A Pulsed Drain Current (10 µs pulse, duty cycle = 1%) IDM 30 A Avalanche Current (Note 7) L = 0.1mH IAS 14.2 A Avalanche Energy (Note 7) L = 0.1mH EAS 10 mJ Thermal Characteristics (@TA = +25°C unless otherwise specified) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 102 °C/W t<10s 61 Total Power Dissipation (Note 6) TA = +25°C PD 1.7 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 75 °C/W t<10s 50 Thermal Resistance, Junction to Case (Note 6) RθJC 14.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 100 nA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 30 40 m Ω VGS = 10V, ID = 4.5A 35 55 VGS = 4.5V, ID = 3.5A Forward Transfer Admittance |Yfs| 4.5 S VDS = 10V, ID = 4.3A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 1287 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss 57 Reverse Transfer Capacitance Crss 44 Gate Resistance RG 1.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg 22.4 nC VDS = 30V, ID = 4.3A Total Gate Charge (VGS = 4.5V) Qg 10.4 Gate-Source Charge Qgs 4.9 Gate-Drain Charge Qgd 3.0 Turn-On Delay Time tD(on) 6.6 nS VGS = 10V, VDD = 30V, RG = 6 Ω, ID = 4.3A Turn-On Rise Time tr 8.1 Turn-Off Delay Time tD(off) 20.1 Turn-Off Fall Time tf 4.0 Body Diode Reverse Recovery Time trr 18 nS IS = 4.3A, dI/dt = 100A/ μs Body Diode Reverse Recovery Charge Qrr 11.9 nC IS = 4.3A, dI/dt = 100A/µs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN6040SSD Document number: DS35673 Rev. 4 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated |
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