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DS2740BU/T датащи(PDF) 14 Page - Dallas Semiconductor |
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DS2740BU/T датащи(HTML) 14 Page - Dallas Semiconductor |
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14 / 15 page ![]() DS2740 14 of 15 ABSOLUTE MAXIMUM RATINGS* Voltage on VDD, DQ, IS1, IS2, PIO, Relative to VSS -0.3V to +6V Voltage on SNS, Relative to VSS -0.3V to +6V Operating Temperature Range -40°C to +85°C Storage Temperature Range -55°C to +125°C Soldering Temperature See IPC/JEDECJ-STD-020A * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS (2.7V £ VDD £ 5.5V; TA = 0°C to +70°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage VDD (Note 1) 2.7 5.5 V Data Pin DQ (Note 1) -0.3 +5.5 V DC ELECTRICAL CHARACTERISTICS (2.7V £ VDD £ 4.2V; TA = 0°C to +70°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 50 65 Active Current IACTIVE VDD = 5.5V 85 mA VDD = 2.0V, DQ = PIO = VSS 0.6 1.0 Sleep-Mode Current ISLEEP VDD = 4.2V, DQ = PIO = VSS 0.9 1.25 mA Undervoltage Sleep Threshold VUV 2.3 2.5 2.7 V DS2740 1.56 Current Resolution ILSB DS27640B 6.25 mV Current Full-Scale Magnitude IFS 51.2 mV DS2740 (Note 2) -3 +1 +5 Current Measurement Offset (Auto Calibrated) IOERR DS2740B (Note 2) -2 0 +2 LSb Current Gain Error IGERR -1 +1 % of reading Accumulated Current Resolution qCA 6.25 mVh Current Sample Clock Frequency fSAMP 18.6 kHz VDD = 3.5V at +25°C -1 +1 Timebase Accuracy tERR -4 +4 % Input Logic High: OVD VIH (Note 1) VDD - 0.2V V Input Logic High: DQ, PIO VIH (Note 1) 1.5 V Input Logic Low: OVD VIL (Note 1) VSS + 0.2 V |
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