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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6217 датащи(PDF) 2 Page - International Rectifier |
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IRF6217 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF6217 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 0.55 ––– ––– SVDS = -50V, ID = -0.42A Qg Total Gate Charge ––– 6.0 9.0 ID = -0.42A Qgs Gate-to-Source Charge ––– 1.6 2.4 nC VDS = -120V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -10V, td(on) Turn-On Delay Time ––– 12 ––– VDD = -75V tr Rise Time ––– 7.2 ––– ID = -0.42A td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.2Ω tf Fall Time ––– 16 ––– VGS = -10V Ciss Input Capacitance ––– 150 ––– VGS = 0V Coss Output Capacitance ––– 30 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 10 ––– pF ƒ = 1.0KHz Coss Output Capacitance ––– 150 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz Coss Output Capacitance ––– 15 ––– VGS = 0V, VDS = -120V, ƒ = 1.0KHz Coss eff. Effective Output Capacitance ––– 45 ––– VGS = 0V, VDS = 0V to -120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 15 mJ IAR Avalanche Current ––– -1.4 A Avalanche Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -0.42A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = -0.42A Qrr Reverse RecoveryCharge ––– 86 130 nC di/dt = -100A/µs Diode Characteristics -1.8 -5.0 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.4 Ω VGS = -10V, ID = -0.42A VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250µA ––– ––– -25 µA VDS = -150V, VGS = 0V, TJ = 25°C ––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 20V IGSS IDSS Drain-to-Source Leakage Current S D G |
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