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DMN3016LDN датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMN3016LDN
подробное описание детали  Low On-Resistance
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3016LDN датащи(HTML) 4 Page - Diodes Incorporated

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DMN3016LDN
Document number: DS37307 Rev. 2 - 2
4 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN3016LDN
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7 Gate Theshold Variation vs Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs Current
V
GS = 0V, TA = 25
oC
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
f=1MHz
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
Qg (nC)
Figure 10 Gate Charge
V
DS = 15V, ID =12A
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
T
J(Max)=150℃
T
A=25℃
V
GS=10V
Single Pulse
DUT on 1*MRP Board
R
DS(ON)
Limited
DC
P
W =10s
P
W =1s
P
W =100ms
P
W =10ms
P
W =1ms
P
W =100µs



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