01/99

B-53

J176, J177

P-Channel Silicon Junction Field-Effect Transistor

Reverse Gate Source & Reverse Gate Drain Voltage

– 30 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

360 mW

Power Derating

3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Gate, 3 Source

Surface Mount

SMPJ176, SMPJ177

At 25°C free air temperature:

J176

J177

Process PJ99

Static Electrical Characteristics

Min

Max

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

30

30

V

Gate Reverse Current

11

nA

Gate Source Cutoff Voltage

1

4

0.8

2.25

V

Drain Saturation Current (Pulsed)

– 2

– 35 – 1.5 – 20

mA

Drain Cutoff Current

– 1

– 1

nA

Dynamic Electrical Characteristics

Max

Max

Drain Source ON Resistance

250

300

Ω

f = 1 kHz

Dynamic Electrical Characteristics

Typ

Typ

Drain Gate Capacitance

5.5

5.5

pF

f = 1 MHz

Source Gate Capacitance

5.5

5.5

pF

f = 1 MHz

Drain Gate + Source Gate Capacitance

32

32

pF

f = 1 MHz

Switching Characteristics

J176

J177

Turn ON Delay Time

15

20

ns

– 6

– 6

V

Rise Time

20

25

ns

63

V

Turn OFF Delay Time

15

20

ns

5.6 k

10 k

Ω

Fall Time

20

25

ns

ØØ

V

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Databook.fxp

1/13/99 2:09 PM

Page B-53