B-52

01/99

J174, J175

P-Channel Silicon Junction Field-Effect Transistor

¥ Choppers

¥ Commutators

¥ Analog Switches

Reverse Gate Source & Reverse Gate Drain Voltage

– 30 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

360 mW

Power Derating

3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Gate, 3 Source

Surface Mount

SMPJ174, SMPJ175

At 25°C free air temperature:

J174

J175

Process PJ99

Static Electrical Characteristics

Min

Max

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

30

30

V

Gate Reverse Current

1

1

nA

Gate Source Cutoff Voltage

5

10

3

6

V

Drain Saturation Current (Pulsed)

– 20 – 125

– 7

– 70

mA

Drain Cutoff Current

– 1

– 1

nA

Dynamic Electrical Characteristics

Max

Max

Drain Source ON Resistance

85

85

Ω

f = 1 kHz

Dynamic Electrical Characteristics

Typ

Typ

Drain Gate Capacitance

5.5

5.5

pF

f = 1 MHz

Source Gate Capacitance

5.5

5.5

pF

f = 1 MHz

Drain Gate + Source Gate Capacitance

32

32

pF

f = 1 MHz

Switching Characteristics

J174

J175

Turn ON Delay Time

2

5

ns

– 10

– 6

V

Rise Time

5

10

ns

12

8

V

Turn OFF Delay Time

5

10

ns

560

1.2 k

Ω

Fall Time

10

20

ns

Ø

Ø

V

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-52