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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N5114 датащи(PDF) 1 Page - InterFET Corporation |
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2N5114 датащи(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  01/99 B-19 2N5114, 2N5115, 2N5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Gate Current 50 mA Continuous Device Power Dissipation 500mW Power Derating 3 mW/°C Storage Temperature Range – 65°C to + 200°C TOÐ18 Package See Section G for Outline Dimensions Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain At 25°C free air temperature: 2N5114 2N5115 2N5116 Process PJ99 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 30 30 30 V IG = – 1µA, VDS = ØV Gate Reverse Current IGSS 500 500 500 pA VGS = 20V, VDS = ØV 111 µA VGS = 20V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) 5 10 3614 V VDS = – 15V, IG = – 1 nA Gate Source Forward Voltage VGS(F) – 1– 1– 1 V VDS = ØV, IG = – 1 mA Drain Saturation Current (Pulsed) IDSS – 30 – 90 mA VGS = ØV, VDS = – 18V – 15 – 60 – 5 – 25 mA VGS = ØV, VDS = – 15V – 500 pA VDS = – 15V, VGS = 12 V – 1 µA VDS = – 15V, VGS = 12 V TA = 150°C Drain Cutoff Current ID(OFF) – 500 pA VDS = – 15V, VGS = 7V – 1 µA VDS = – 15V, VGS = 7V TA = 150°C – 500 pA VDS = – 15V, VGS = 5V – 1 µA VDS = – 15V, VGS = 5V TA = 150°C – 1.3 V VGS = ØV, ID = – 15 mA Drain Source ON Voltage VDS(ON) – 0.8 V VGS = ØV, ID = – 7 mA – 0.6 V VGS = ØV, ID = – 3 mA Static Drain Source ON Resistance rDS(ON) 75 100 150 Ω VGS = ØV, ID = – 1 mA Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 75 100 150 Ω VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 25 25 27 pF VDS =– 15V, VGS = ØV f = 1 MHz Common Source Reverse 7pF VDS = ØV, VGS = 12V f = 1 MHz Transfer Capacitance Crss 7pF VDS = ØV, VGS = 7 V f = 1 MHz 7pF VDS = ØV, VGS = 5V f = 1 MHz Switching Characteristics 2N5114 2N5115 2N5116 Turn ON Delay Time td(on) 610 25 ns VDD – 10 – 6 – 6 V Rise Time tr 10 20 35 ns VGG 20 12 8 V Turn OFF Delay Time td(off) 68 20 ns RL 130 910 2000 Ω Fall Time tf 15 30 60 ns RG 100 220 390 Ω ID(ON) – 15 – 7 – 3 mA ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:31 AM Page B-19 |
Аналогичный номер детали - 2N5114 |
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Аналогичное описание - 2N5114 |
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ссылки URL |
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