TPC8201 datasheet(3/7 Pages) TOSHIBA

номер детали	TPC8201

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

PDF	7 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8201

2003-02-20

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

µA

Drain cut−off current

IDSS

VDS = 30 V, VGS = 0 V

—

µA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

—

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

—

2.0

RDS (ON)

VGS = 4 V, ID = 2.5 A

—

mΩ

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

—

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

—

Input capacitance

Ciss

—

475

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

270

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

Total gate charge (Gate−source

plus gate−drain)

—

Gate−source charge

Qgs

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 5 A

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

—

−1.2

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