POWERDI is a registered trademark of Diodes Incorporated

DMN10H1099SFG

Document number: DS36371 Rev. 2 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated

DMN10H099SFG

Characteristic

Symbol

Value

Units

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Steady

State

4.2

3.3

A

t<10s

5.8

4.5

A

Steady

State

3.6

2.9

A

t<10s

5.2

4.1

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

20

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.98

W

0.57

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

131

°C/W

t<10s

76

Total Power Dissipation (Note 6)

2.31

W

1.18

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

55

°C/W

t<10s

28

Thermal Resistance, Junction to Case (Note 6)

6.9

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

100

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.5

2.0

3.0

V

Static Drain-Source On-Resistance

-

54

80

mΩ

-

58

99

Forward Transfer Admittance

-

13

-

S

Diode Forward Voltage

-

0.77

-

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

1172

-

pF

f = 1.0MHz

Output Capacitance

-

40.8

-

pF

Reverse Transfer Capacitance

-

31.3

-

pF

Gate Resistance

-

1.6

-

Ω

-

25.2

-

nC

-

12.2

-

nC

Gate-Source Charge

-

5.3

-

nC

Gate-Drain Charge

-

5.9

-

nC

Turn-On Delay Time

-

5.4

-

ns

Turn-On Rise Time

-

5.9

-

ns

Turn-Off Delay Time

-

20.0

-

ns

Turn-Off Fall Time

-

7.3

-

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.