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DSEP6-06AS датащи(PDF) 1 Page - IXYS Corporation |
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DSEP6-06AS датащи(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2004 IXYS All rights reserved 1 - 2 DSEP 6-06AS IXYS reserves the right to change limits, test conditions and dimensions. HiPerFREDTM Epitaxial Diode with soft recovery Features • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low I RM-values • Soft recovery behaviour Applications • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses • Operating at lower temperature or space saving by reduced cooling Dimensions see pages D4 - 85-86 I FAVM =6 A V RRM = 600 V t rr = 20 ns TO-252AA (DPAK) Anode Anode Cathode (Flange) V RSM V RRM Type Marking V V on product 600 600 DSEP 6-06AS 6P060AS C A Symbol Conditions Maximum Ratings I FRMS T VJ = TVJM 26 A I FAVM ① T C = 152°C; rectangular, d = 0.5 6 A I FRM t P < 10 µs; rep. rating, pulse width limited by TVJM 12 A I FSM T VJ = 45°C; t = 10 ms (50 Hz), sine 40 A E AS T VJ = 25°C; non-repetitive 0.1 mJ I AS = 0.8 A; L = 180 µH I AR V A = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A T VJ -40...+175 °C T VJM 175 °C T stg -40...+150 °C P tot T C = 25°C 55 W Weight typ. 0.3 g ① I FAVM rating includes reverse blocking losses at T VJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 Symbol Conditions Characteristic Values typ. max. I R T VJ = 25°C V R = VRRM 50 µA T VJ = 150°C VR = VRRM 0.2 mA V F I F = 6 A; T VJ = 150°C 1.33 V T VJ = 25°C 2.02 V R thJC 2.8 K/W t rr I F = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 20 tbd ns I RM V R = 100 V; I F = 10 A; -diF/dt = 100 A/µs 3.5 4.4 A T VJ = 100°C |
Аналогичный номер детали - DSEP6-06AS |
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Аналогичное описание - DSEP6-06AS |
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