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DMN4010LFG

Document number: DS36764 Rev. 2 - 2

3 of 7

www.diodes.com

March 2015

© Diodes Incorporated

DMN4010LFG

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

40

—

—

V

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

—

3.0

V

Static Drain-Source On-Resistance

—

—

12

m

—

15

Diode Forward Voltage

—

0.72

—

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

1,810

—

pF

f = 1.0MHz

Output Capacitance

—

135

—

pF

Reverse Transfer Capacitance

—

112

—

pF

Gate Resistance

—

1.7

—

—

17

—

nC

—

37

—

nC

Gate-Source Charge

—

5.6

—

nC

Gate-Drain Charge

—

7.1

—

nC

Turn-On Delay Time

—

5.1

—

ns

Turn-On Rise Time

—

13

—

ns

Turn-Off Delay Time

—

36

—

ns

Turn-Off Fall Time

—

13

—

ns

Body Diode Reverse Recovery Time

—

12.2

—

nS

Body Diode Reverse Recovery Charge

—

5.4

—

nC

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0

0.5

1

1.5

2

2.5

3

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

DS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 4.0V

GS

0

5

10

15

20

25

30

1

1.5

2

2.5

3

3.5

4

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A