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CPC7557N датащи(PDF) 3 Page - IXYS Corporation

номер детали CPC7557N
подробное описание детали  Monolithic Construction
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC7557N датащи(HTML) 3 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
3
www.ixysic.com
R04
CPC7557
1.4 Recommended Operating Conditions
1.5 General Conditions
Typical values are characteristic of the device at 25
C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for TA=25C.
1.6 DC Electrical Characteristics
1.7 AC Electrical Characteristics
2
Typical Performance Data
Parameter
Symbol
Minimum
Maximum
Units
Diode Forward Current (Average)
IF
-
240
mArms
Reverse Voltage
VR
-
100
V
Operating Temperature Range
TA
-40
+125
C
Thermal Impedance
JA
120
-
C/W
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Forward Current
-
IF
-
-
240
mArms
Diode Forward Voltage Drop
IF = 40mA
VF
0.83
0.91
0.97
V
IF = 250mA
1
1.3
1.49
Reverse Voltage Leakage Current
VR=100V
IR
--
1
A
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Input Zero Bias Capacitance
V+  V= 0V
Measured from VA to VB
CAB
-4.4
12
pF
Output Zero Bias Capacitance
VA = VB
Measured from V+ to V
C+/
-8.3
20
pF
Bridge Zero Bias Capacitance
V+  V= 0V Measured from
VA to V+/- and VB to V+/-
CA/+, CA/,
CB/+, CB/
-8.5
12
pF
2.8
2.6
2.4
2.0
1.8
1.6
-20
20
60
-40
0
40
80
Temperature (ºC)
Bridge Forward Voltage (V
F)
vs. Temperature
100
1.4
1.2
1.0
I
F=250mA
I
F=40mA
2.2
1.6
1.4
1.2
1.0
0.8
0.6
-20
20
60
-40
0
40
80
Temperature (ºC)
Diode Forward Voltage (V
F)
vs. Temperature
100
0.4
0.2
0
I
F=250mA
I
F=40mA
152
150
148
146
144
142
-20
20
60
-40
0
40
80
Temperature (ºC)
Diode Reverse Breakdown Voltage (V
RRM)
vs. Temperature
100
140
138



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