BUZ72 datasheet(1/2 Pages) ISC

номер детали	BUZ72

подробное описание детали	Low Drive Requirements

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel Mosfet Transistor

BUZ72

·FEATURES

·Low R

DS(on)

·V

GS

Rated at

±20V

·Silicon Gate for Fast Switching Speed

·High Input Impedance

·Low Drive Requirements

·Majority Carrier Device

·DESCRITION

·Designed especially for applications such as

switching regulators, switching converters,

motor drivers ,relay drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

9

A

IDM

Drain Current-Single Plused

36

A

PD

Total Dissipation @TC=25℃

40

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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Аналогичный номер детали - BUZ72

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BUZ72	195Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Infineon Technologies A...	BUZ72	90Kb / 8P	SIPMOS Power Transistor 05.99
STMicroelectronics	BUZ72A	112Kb / 7P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Jun-1993
Siemens Semiconductor G...	BUZ72A	193Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Intersil Corporation	BUZ72A	45Kb / 6P	9A, 100V, 0.250 Ohm, N-Channel Power MOSFET June 1999

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