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MBR3100 датащи(PDF) 2 Page - ON Semiconductor

номер детали MBR3100
подробное описание детали  SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS
PDF  4 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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MBR3100 датащи(HTML) 2 Page - ON Semiconductor

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MBR3100
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 2, Mounting Method 3)
RθJA
28
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 Amps, TL = 25°C)
(iF = 3.0 Amps, TL = 100°C)
vF
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL = 25°C
TL = 100°C
iR
0.6
20
mA
1. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2.0%.
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0
2.0
1.0
3.0
4.0
5.0
0.5
1
1.5
2
2.5
TA, AMBIENT TEMPERATURE (°C)
20
100
60
40
80
4
2
0
dc
120
140
160
180
VR REVERSE VOLTAGE (VOLTS)
020
10
30
40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.2
0.1
0.3 0.4 0.5
5
0.2
0.1
3
2
1
0.7
0.6
0.8 0.9
0.3
0.05
0.5
25°C
100°C
TJ = 150°C
50
30
20
10
1
1.2 1.3
1.1
50
60
80
90
100
0.0001
0.0002
0.0005
25°C
70
100°C
TJ = 150°C
125°C
1
3
5
6
7
8
3
3.5
4
dc
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
SQUARE
WAVE
SQUARE
WAVE
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating
(Mounting Method #3 per Note 2)
Figure 4. Power Dissipation



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