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IR3101 датащи(PDF) 3 Page - International Rectifier

номер детали IR3101
подробное описание детали  Half-Bridge FredFet and Integrated Driver
PDF  10 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IR3101 датащи(HTML) 3 Page - International Rectifier

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IR3101
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3
MOSFET Characteristics
VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM.
Symbol
Definition
Min.
Typ
Max.
Units Conditions
V(BR)DSS
Drain-to-Source breakdown
voltage
500
-
-
V
VIN=0V, ID=250µA
IDSS
Drain-to-Source leakage
current
-
-
50
µA
VDS=500V, VIN=0V
RDS(on)
Static drain-to-source on
resistance
-
0.8
1.0
Ω
ID = 1.5A
VSD
Diode forward voltage
-
0.82
0.9
V
ID = 1.5A, VIN=0V
RDS(on)
Static drain-to-source on
resistance
-
1.7
2.0
Ω
ID = 1.5A, TJ=125°C
VSD
Diode forward voltage
-
0.70
0.79
V
ID = 1.5A, VIN=0V, TJ=125°C
EON
Turn-On energy losses
-
100
135
µJ
EOFF
Turn-Off energy losses
-
5
10
µJ
EREC
Body-Diode reverse recovery
Llosses
-
10
20
µJ
tRR
Reverse recovery time
-
105
180
ns
EON
Turn-On energy losses
-
150
205
µJ
EOFF
Turn-Off energy losses
-
10
17
µJ
EREC
Body-Diode reverse recovery
Llosses
-
15
35
µJ
tRR
Reverse recovery time
-
130
230
ns
Coss
Output capacitance
-
-
100
pF
VIN=0V, VDD=30V, f=1MHz
IF = 1.5A
VCC = 300V
di/dt = 200A/
µs
TJ=125°C
IF = 1.5A
VCC = 300V
di/dt = 200A/
µs



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