DMTH6005LCT

Document number: DS38743 Rev. 1 - 2

2 of 6

www.diodes.com

June 2016

© Diodes Incorporated

DMTH6005LCT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

20

V

Continuous Drain Current (Note 6)

100

A

78

Maximum Continuous Body Diode Forward Current (Note 6)

100

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

160

A

Avalanche Current, L=1mH

14.8

A

Avalanche Energy, L=1mH

98

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2.8

W

Thermal Resistance, Junction to Ambient (Note 5)

52.8

°C/W

Total Power Dissipation (Note 6)

125

W

Thermal Resistance, Junction to Case (Note 6)

1.2

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

3

V

Static Drain-Source On-Resistance

—

4.5

6

m

Ω

—

8.8

10

m

Ω

Diode Forward Voltage

—

—

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

2962

—

pF

f = 1MHz

Output Capacitance

—

965.2

—

Reverse Transfer Capacitance

—

59.8

—

Gate Resistance

—

0.66

—



—

47.1

—

nC



—

23.1

—

Gate-Source Charge

—

10.2

—

Gate-Drain Charge

—

12.5

—

Turn-On Delay Time

—

8.3

—

ns

Turn-On Rise Time

—

9.4

—

Turn-Off Delay Time

—

22

—

Turn-Off Fall Time

—

8.9

—

Reverse Recovery Time

—

40.4

—

ns

Reverse Recovery Charge

—

49.7

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on infinite heat sink.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.