DMNH6021SPS

Document number: DS37685 Rev. 2 - 2

4 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMNH6021SPS

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

-50

-25

0

25

50

75

100 125 150 175

V

= 4.5V

I = 12A

GS

D

V

=

V

I = 15A

GS

D

10

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = 125°C

A

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 175°C

A

T = -55°C

A

T = 25°C

A

T = 85°C

A

Q

(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

0

4

8

12

16

20

V

= 30V

I =

A

DS

D

20

175°C

150°C

125°C

85°C

25°C

-55°C

T , JUNCTION TEMPERATURE (C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(t

h

)

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

-50

-25

0

25

50

75

100 125 150 175

I = 1mA

D

I = 250µA

D

T , Junction Temperature (°C)

J

Figure 10 Avalanche Energy

0

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

25

50

75

100

125

150

175

I = 10A

D

I

= 15A

D

I = 6A

D