DMNH6021SPS datasheet(2/7 Pages) DIODES

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DMNH6021SPS

Document number: DS37685 Rev. 2 - 2

2 of 7

www.diodes.com

June 2016

DMNH6021SPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V (Note 7)

TC = +25°C

TC = +100°C

Maximum Continuous Body Diode Forward Current (Note 7)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Avalanche Current, L = 0.1mH (Note 8)

IAS

Avalanche Energy, L = 0.1mH (Note 8)

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.6

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

3.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

Total Power Dissipation (Note 7)

TC = +25°C

Thermal Resistance, Junction to Case (Note 7)

RθJC

1.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

mΩ

VGS = 10V, ID = 12A

—

VGS = 4.5V, ID = 12A

Diode Forward Voltage

VSD

—

0.75

1.2

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

CISS

—

1,016

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

153

—

Reverse Transfer Capacitance

CRSS

—

76.8

—

Gate Resistance

—

2.5

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

9.5

—

VDS = 30V, ID = 20A

Total Gate Charge (VGS = 10V)

—

19.7

—

Gate-Source Charge

QGS

—

3.6

—

Gate-Drain Charge

QGD

—

4.8

—

Turn-On Delay Time

tD(ON)

—

4.2

—

VDD = 30V, VGS = 10V,

ID = 10A, RG = 4.7Ω,

Turn-On Rise Time

—

Turn-Off Delay Time

tD(OFF)

—

27.5

—

Turn-Off Fall Time

—

15.3

—

Body Diode Reverse Recovery Time

tRR

—

20.8

—

IF = 20A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

13.9

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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