ACE7333M datasheet(1/6 Pages) ACE

номер детали	ACE7333M

подробное описание детали	P-Channel 30-V (D-S) MOSFET

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE7333M

P-Channel 30-V (D-S) MOSFET

VER 1.1

1

Description

The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This

device is suitable for use as a high side switch in SMPS and general purpose applications.

Features

 Low r

DS(on) trench technology

 Low thermal impedance

 Fast switching speed

Applications

 White LED boost converters

 Automotive Systems

 Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

TA=25

OC

ID

-10.9

A

TA=70

OC

-8.2

Pulse Drain Current

b

IDM

-50

Continuous Drain Current (Diode Continuous)

a

IS

-4.5

A

Power Dissipation

a

TA=25

OC

PD

3.5

W

TA=70

OC

2

Operating Junction and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t≦10sec

RθJA

35

℃/W

Steady State

81

℃/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

-30

20 @ VGS = -10V

-10.9

36 @ VGS = -4.5V

-8.1

Аналогичный номер детали - ACE7333M

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE7333C	640Kb / 11P	28V, 3A, 500KHz Synchronous Step-Down DC/DCConverter VER 1.2
ACE Technology Co., LTD...	ACE7333CIMH	640Kb / 11P	28V, 3A, 500KHz Synchronous Step-Down DC/DCConverter VER 1.2

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Аналогичное описание - ACE7333M

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