ACE7332M datasheet(1/6 Pages) ACE

номер детали	ACE7332M

подробное описание детали	N-Channel 30-V (D-S) MOSFET

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE7332M

N-Channel 30-V (D-S) MOSFET

VER 1.1

1

Description

The ACE7332M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a kelvin connection to the source, which may be used to bypass the source inductance.

Key Features



Low rDS(on) trench technology



Low thermal impedance



Fast switching speed

Features

 V

DS(V)=30V

 I

D=15A (VGS=10V)

 R

DS(ON)＜8.5mΩ (VGS=10V)

 R

DS(ON)＜13mΩ (VGS=4.5V)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Drain Current (Continuous) *AC

TA=25

OC

ID

15

A

TA=70

OC

12

Drain Current (Pulse) *B

IDM

50

Power Dissipation

TA=25

OC

PD

3.5

W

TA=70

OC

2

Operating and Storage Temperature Range

TJ,Tstg -55 to 150

OC

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

35

°C/W

Steady State

81

Packaging

TypeOrdering information

DFN3x3-8L

ACE7332M XX + H

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

30

13 @ VGS = 10V

14

18 @ VGS = 4.5V

12

NN : DFN3*3-8L

Pb - free

Halogen - free

Аналогичный номер детали - ACE7332M

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Аналогичное описание - ACE7332M

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More results

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Аналогичный номер детали - ACE7332M

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