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DS1920 датащи(PDF) 21 Page - Dallas Semiconductor |
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DS1920 датащи(HTML) 21 Page - Dallas Semiconductor |
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21 / 22 page ![]() DS1920 21 of 22 AC ELECTRICAL CHARACTERISTICS: 1-WIRE INTERFACE (-55°C to +100°C; VPUP=2.8V to 6.0V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Time Slot tSLOT 60 120 µs Write 1 Low Time tLOW1 1 15 µs Write 0 Low Time tLOW0 60 120 µs Read Data Valid tRDV exactly 15 µs Release Time tRELEASE 0 15 45 µs Read Data Setup tSU 1 µs 8 Recovery Time tREC 1 µs Reset Time High tRSTH 480 µs Reset Time Low tRSTL 480 4800 µs 6,7 Presence Detect High tPDHIGH 15 60 µs Presence Detect Low tPDLOW 60 240 µs NOTES: 1. Temperature conversion will work with ±2°C accuracy down to VPUP = 3.4V. 2. All voltages are referenced to ground. 3. IDD specified with low impedance pull up to 5.0V. 4. Active current refers to temperature conversion. 5. Writing to EEPROM consumes approximately 200 µA. 6. tRSTL may be up to 4800 µs. With longer times, the result of temperature conversion may get lost. 7. The reset low time should be restricted to a maximum of 960 ms, to allow interrupt signaling, otherwise it could mask or conceal interrupt pulses. 8. Read data setup time refers to the time the host must pull the 1-Wire bus low to read a bit. Data is guaranteed to be valid within 1 µs of this falling edge and will remain valid for 14 µs minimum. (15 µs total from falling edge on 1-Wire bus.) 9. Capacitance on the data contact could be 800 pF when power is first applied. If a 5k Ω resistor is used to pull up the data line to VCC , 5 µs after power has been applied, the parasite capacitance will not affect normal communications. 10. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to always guarantee a presence pulse. 11. See Typical Curve for specification limits outside the 0°C to 70°C range. Thermometer error reflects sensor accuracy as tested during calibration. |
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