AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 – 2003 July

9

4.3 Wafer Level Reliability

4.3.1 Electromigration

Purpose:

To evaluate the AT56800, AT35500, and AT37000 processes for Metal 1, Metal 3 & Via Electromigration

Reliability. These 3 processes have the same steps for interconnect levels.

Test Parameters:

Metal 1 & Metal 3:

Sample Size = 15

Temp = 250C with Joule heating .

J = 3.5E06 A/cm2.

Via:

Sample Size = 15

Temp = 200C with Joule heating.

J = 2.5E06 A/cm2.

Black’s Equation Parameters:

Failure Criteria - 10% increase in resistance. Data taken every 1% change.

n = 2

Ea = 0.6eV

Lifetime Predictions:

Metal 1 :

Metal 3 :

VIA :

Conclusion:

All splits pass the minimum 10 years lifetime.