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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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25TTS08FP датащи(PDF) 5 Page - International Rectifier |
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25TTS08FP датащи(HTML) 5 Page - International Rectifier |
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5 / 7 page  5 25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance Z thJC Characteristics 1 10 100 1000 01 23 45 T = 25°C J Instantaneous On-state Voltage (V) T = 125°C J 25TTS.. Series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Current (A) b)Recommended load line for Frequency Limited by PG(AV) a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs 25TTS.. Series IGD VGD <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms 0.01 0.1 1 10 0. 0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady State Value (DC Operation) 25TTS.. Series Single Pulse |
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