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CLC5644IM датащи(PDF) 4 Page - National Semiconductor (TI) |
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CLC5644IM датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 9 page ![]() Electrical Characteristics (Continued) (A V = +2, Rf =1.65kΩ,RL =100Ω,VS = ±5V, unless specified) Parameter Conditions Typ Min/Max Ratings (Note 2) Units Miscellaneous Performance Input Resistance (Non-Inverting) 2 1 0.5 M Ω Input Capacitance (Non-Inverting) 122 pF Common-Mode Input Range ±2.2 ±2.0 ±1.4 V Output Voltage Range R L = 150Ω ±2.8 ±2.6 ±2.5 V Output Current 70 50 30 mA Output Resistance, Closed Loop DC 0.2 0.3 0.6 m Ω Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. Note 3: AJ-level: spec. is 100% tested at +25˚C. Typical Performance Characteristics (A V = +2, Rf = 1.65kΩ,RL = 100Ω,VS = +5V) Non-Inverting Frequency Response Frequency (Hz) 1M 10M 100M -45 0 -90 -225 -135 -180 Gain Phase Vo = 0.25Vpp Av = +1 Rf = 6.98kΩ Av = +2 Rf = 1.65kΩ Av = +5 Rf = 499Ω Av = +10 Rf = 249Ω DS015009-5 Inverting Frequency Response Frequency (Hz) 1M 10M 100M -225 -180 -135 -90 -45 0 45 -270 -405 -315 -360 Gain Phase Vo = 0.25Vpp Av = -1 Rf = 1.1kΩ Av = -2 Rf = 887Ω Av = -5 Rf = 422Ω Av = -10 Rf = 294Ω DS015009-6 Frequency Response vs. R L Frequency (Hz) 1M 10M 100M -90 0 -180 -450 -270 -360 Gain Phase Vo = 5Vpp RL = 25Ω RL = 100Ω RL = 1kΩ 1000M DS015009-7 Frequency Response vs. V O Frequency (Hz) 1M 10M 100M Vo = 2Vpp Vo = 4Vpp Vo = 0.1Vpp Vo = 1Vpp DS015009-8 www.national.com 4 |
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