 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF7343 датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7343 датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRF7343 2 www.irf.com
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 55 — — VGS = 0V, ID = 250µA P-Ch -55 — — VGS = 0V, ID = -250µA N-Ch — 0.059 — Reference to 25°C, ID = 1mA P-Ch — 0.054 — Reference to 25°C, ID = -1mA — 0.043 0.050 VGS = 10V, ID = 4.7A — 0.056 0.065 VGS = 4.5V, ID = 3.8A — 0.095 0.105 VGS = -10V, ID = -3.4A — 0.150 0.170 VGS = -4.5V, ID = -2.7A N-Ch 1.0 — — VDS = VGS, ID = 250µA P-Ch -1.0 — — VDS = VGS, ID = -250µA N-Ch 7.9 — — VDS = 10V, ID = 4.5A P-Ch 3.3 — — VDS = -10V, ID = -3.1A N-Ch — — 2.0 VDS = 55V, VGS = 0V P-Ch — — -2.0 VDS = -55V, VGS = 0V N-Ch — — 25 VDS = 55V, VGS = 0V, TJ = 55°C P-Ch — — -25 VDS = -55V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V N-Ch — 24 36 P-Ch — 26 38 N-Ch — 2.3 3.4 P-Ch — 3.0 4.5 N-Ch — 7.0 10 P-Ch — 8.4 13 N-Ch — 8.3 12 P-Ch — 14 22 N-Ch — 3.2 4.8 P-Ch — 10 15 N-Ch — 32 48 P-Ch — 43 64 N-Ch — 13 20 P-Ch — 22 32 N-Ch — 740 — P-Ch — 690 — N-Ch — 190 — pF P-Ch — 210 — N-Ch — 71 — P-Ch — 86 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 4.5A, VDS = 44V, VGS = 10V P-Channel ID = -3.1A, VDS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 16Ω P-Channel VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 16Ω N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch — — 2.0 P-Ch — — -2.0 N-Ch — — 38 P-Ch — — -27 N-Ch — 0.70 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V P-Ch — -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V N-Ch — 60 90 P-Ch — 54 80 N-Ch — 120 170 P-Ch — 85 130 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =2.0A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -2.0A, di/dt = 100A/µs N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting T J = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A. P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A. nA |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
