STM4417 datasheet(3/7 Pages) MSK

номер детали	STM4417

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

производитель	MSK [M.S. Kennedy Corporation]

домашняя страница	http://www.mskennedy.com

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3 / 7 page

Ver 1.0

www.samhop.com.tw

Apr,24,2013

T j ( °

C )

-VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

-ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

STM4417

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

0.5

1.0

1.5

2.0

2.5

3.0

V G S = -3V

V G S = -3.5V

V G S = -4V

V G S = -4.5V

0.7

4.2

3.5

2.8

2.1

1.4

25 C

125 C

-55 C

VGS = -10V

VGS =-4.5V

2.0

1.8

1.6

1.4

1.2

1.0

100

125

150

G S

=-10V

=-5A

V GS =-4.5V

ID= -4.3A

V DS =V GS

ID=-250uA

V G S = -10V

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