2SK1222 datasheet(1/2 Pages) ISC

номер детали	2SK1222

подробное описание детали	Drain Current ?밒D=15A@ TC=25C

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2SK1222

DESCRIPTION

·Drain Current

–I

D=15A@ TC=25℃

·Drain Source Voltage-

: VDSS= 450V(Min)

APPLICATIONS

·Designed for high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

450

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

15

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.56

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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Fuji Electric	2SK1221	134Kb / 4P	N-Channel Silicon Power MOS-FET
Inchange Semiconductor ...	2SK1221	372Kb / 2P	isc N-Channel MOSFET Transistor
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Аналогичное описание - 2SK1222

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Inchange Semiconductor ...	12N65	136Kb / 2P	Drain Current ?밒D= 12A@ TC=25C
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