D2136 datasheet(1/3 Pages) PANASONIC

номер детали	D2136

подробное описание детали	Silicon NPN triple diffusion planar type

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: September 2003

SJD00246BED

2SD2136

Silicon NPN triple diffusion planar type

For power amplification

Complementary to 2SB1416

■ Features

• High forward current transfer ratio h

FE which has satisfactory linearity.

• Low collector-emitter saturation voltage V

CE(sat)

• Allowing supply with the radial taping

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a = 25°C ± 3°C

Unit: mm

1: Emitter

2: Collector

3: Base

MT-3-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

60

V

Collector-emitter voltage (Base open)

VCEO

60

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

3A

Peak collector current

ICP

5A

Collector power dissipation

PC

1.5

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC

= 30 mA, I

B

= 060

V

Base-emitter voltage *

1

VBE

VCE = 4 V, IC = 3 A

1.8

V

Collector-emitter cutoff current (Emitter-base short)

ICES

VCE = 60 V, VBE = 0

200

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE

= 30 V, I

B

= 0

300

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 6 V, IC = 01

mA

Forward current transfer ratio

hFE1 *

2

VCE = 4 V, IC = 1 A

40

250



hFE2 *

1

VCE

= 4 V, I

C

= 3 A

10

Collector-emitter saturation voltage *

1

VCE(sat)

IC = 3 A, IB = 0.375 A

1.2

V

Transition frequency

fT

VCE = 5 V, IE = − 0.1 A, f = 200 MHz

220

MHz

Turn-on time

ton

IC

= 1 A, I

B1

= 0.1 A, I

B2

= − 0.1 A

0.5

µs

Storage time

tstg

2.5

µs

Fall time

tf

0.4

µs

7.5±0.2

0.65±0.1

0.7±0.1

1.15±0.2

2.5±0.2

0.85±0.1

1.0±0.1

0.7±0.1

1.15±0.2

0.5±0.1

1

0.8 C

23

0.4±0.1

4.5±0.2

0.8 C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

P

Q

R

hFE1

40 to 90

70 to 150

120 to 250

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