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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CTL0433PS-R3 датащи(PDF) 1 Page - CT Micro International Corporation |
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CTL0433PS-R3 датащи(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 1 Jun, 2015 CTL0433PS-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features •••• Drain-Source Breakdown Voltage VDSS -30 V •••• Drain-Source On-Resistance RDS(ON) 38m Ω, at VGS= -10V, ID= -4.1A RDS(ON) 50m Ω, at VGS= -4.5V, ID= -3.0A •••• Continuous Drain Current at TA=25 ℃ID = -4.3A •••• Advanced high cell density Trench Technology •••• RoHS Compliance & Halogen Free Applications •••• Power Management in Note book •••• Portable Equipment •••• Battery Powered System •••• DC/DC Converter Description The CTL0433PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Gate Source Drain G Drain |
Аналогичный номер детали - CTL0433PS-R3 |
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Аналогичное описание - CTL0433PS-R3 |
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