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BUJ302A датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали BUJ302A
подробное описание детали  High Voltage
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUJ302A датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUJ302A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUJ302A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUJ302A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0, L= 25mH
500
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.1
V
ICES
Collector Cutoff Current
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125℃
0.2
1.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
15
35
hFE-2
DC Current Gain
IC= 0.1A ; VCE= 5V
14
35
Switching Times ;Resistive Load
ton
Turn-on Time
IC= 1.0A; IB1= -IB2= 0.2A;
RL= 75Ω; VBB2= 4V
1.0
μs
ts
Storage Time
4.0
μs
tf
Fall Time
0.8
μs
Switching Times ;Resistive Load
ts
Storage Time
IC= 1.0A; IB1= -IB2= 0.2A;
LB=1uH; -VBB= 5V
1.4
μs
tf
Fall Time
145
160
ns
Switching Times ;Resistive Load
ts
Storage Time
IC= 1.0A; IB1= -IB2= 0.2A;
LB=1uH; -VBB= 5V ；Tj=100℃
1.5
μs
tf
Fall Time
200
ns



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