2SC5447 datasheet(2/7 Pages) HITACHI

номер детали	2SC5447

подробное описание детали	Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

PDF	7 Pages

Scroll/Zoom	100%

производитель	HITACHI [Hitachi Semiconductor]

домашняя страница	http://www.renesas.com/eng

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2SC5447

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

CES

1500

Emitter to base voltage

EBO

Collector current

Collector peak current

c(peak)

Collector power dissipation

Note1

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Collector to emitter diode forward current I

Note:

1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Emitter to base breakdown

voltage

(BR)EBO

6—

—

E = 400mA, IC = 0

Collector cutoff current

CES

—

500

µAV

CE = 1500V, RBE = 0

DC current transfer ratio

FE1

5—

CE = 5 V, IC = 1A

DC current transfer ratio

FE2

4—

CE = 5 V, IC = 5A

Collector to emitter saturation

voltage

CE(sat)

——

C =

5A, I

B = 1.25A

Base to emitter saturation

voltage

BE(sat)

—

1.5

C =

5A, I

B = 1.25A

Collector to emitter diode

forward voltage

ECF

——

F =

Fall time

—

0.2

0.4

µsI

CP = 4A, IB1 = 1.2A

H = 31.5kHz

Fall time

—

0.15

—

µsI

CP = 4A, IB1 = 1A

H = 64kHz

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