TLP372 datasheet(3/8 Pages) TOSHIBA

номер детали	TLP372

подробное описание детали	TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 8 page

TLP371,TLP372

2002-09-25

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

IF = 10 mA

1.0

1.15

1.3

Reverse current

VR = 5 V

―

µA

Capacitance

V = 0, f = 1 MHz

―

Collector

-emitter

breakdown voltage

V(BR) CEO

IC = 0.1 mA

300

―

Emitter

-collector

breakdown voltage

V(BR) ECO

IE = 0.1 mA

0.3

―

Collector

-base

breakdown voltage (TLP371)

V(BR) CBO

IC = 0.1 mA

300

―

Emitter

-base

breakdown voltage (TLP371)

V(BR) EBO

IE = 0.1 mA

―

VCE = 200 V

―

200

Collector dark current

ICEO

VCE = 200 V

Ta = 85 °C

―

µA

Collector dark current (TLP371)

ICER

VCE = 200 V

Ta = 85 °C,

RBE = 10 MΩ

―

0.5

µA

Collector dark current (TLP371)

ICBO

VCE = 200 V

―

0.1

―

DC forward current gain (TLP371)

hFE

VCE = 5 V,

IC = 10 mA

―

7000

―

Capacitance (collecter to emitter)

CCE

V = 0, f = 1 MHz

―

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

MIn

Typ.

Max

Unit

Current transfer ratio

IC / IF

IF = 1 mA, VCE = 1 V

1000

4000

―

Saturated CTR

IC / IF (sat)

IF = 10 mA, VCE = 1 V

500

―

Base photo

-current (TLP371)

IPB

IF = 1 mA, VCB = 1 V

―

µA

IC = 10 mA, IF = 1 mA

―

1.0

Collector

-emitter

saturation voltage

VCE (sat)

IC = 100 mA, IF = 10 mA

0.3

―

1.2

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