R

SEMICONDUCT OR

LL5711, LL6263

SMALL SIGNAL SCHOTTKY DIODES

FEATURES

MECHANICAL DATA

ABSOLUTE RATINGS(LIMITING VALUES)

ELECTRICAL CHARACTERISTICS

Case: MiniMELF glass case(SOD-80 )

Weight: Approx. 0.05 gram

For general purpose applications

Metal-on-silicon junction Schottky barrier device which is protected by a

PN junction guard ring. The low forward voltage drop and fast switching

make it ideal for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level applications

These diodes are also available in the DO-35 case with type

designation 1N5711 and 1N6263.

Reverse breakover voltage

Leakage current at V =50V

R

Forward voltage drop at I =1mA

F

200

0.41

300

1.0

2.0

1

60

70

I =15mA

F

Reverse Recovery time at I =I =5mA,recover to 0.1 R

FR

I

Junction Capacitance at V =0V ,f=1MHz

R

Thermal resistance

mW

A

V

V

Porwer Dissipation (infinite Heat Sink)

Peak Reverse Voltage

Storage Temperature Range

Junction temperature

Maximum Single cycle surge 10ms square wave

-55 to+150

V

V

V

V

nA

pF

ns

125

2.0

400

1)

70

60

1) Valid provided that electrodes are kept at ambient temperature

Symbols

Units

Value

Min.

Typ.

Max.

Unis

Symbols

LL5711

LL6263

LL5711

LL6263

MiniMELF

Dimensions in inches and (millimeters)

0.142(3.6)

0.126(3.2)

0.019(0.48)

0.011(0.28)

0.063(1.6)

0.055(1.4)

High temperature soldering guaranteed 260 C 10 seconds at terminals

:/

°

Component in accordance to RoHS 2011 65 EU

//

°C

°C

(Ratings at 25 C ambient temperature unless otherwise specified)

°

°C/W

JINAN JINGHENG ELECTRONICS CO., LTD.

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WWW.JINGHENGGROUP.COM

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