2SC5448 datasheet(2/7 Pages) HITACHI

номер детали	2SC5448

подробное описание детали	Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

PDF	7 Pages

Scroll/Zoom	100%

производитель	HITACHI [Hitachi Semiconductor]

домашняя страница	http://www.renesas.com/eng

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2SC5448

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

CBO

1500

Collector to emitter voltage

CEO

700

Emitter to base voltage

EBO

Collector current

Collector peak current

c(peak)

Collector power dissipation

Note1

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to emitter

breakdown voltage

(BR)CEO

700

——

C = 10mA, RBE = ∞

Emitter to base breakdown

voltage

(BR)EBO

6—

—

E = 10mA, IC = 0

Collector cutoff current

CES

—

500

µAV

CE = 1500V, RBE = 0

DC current transfer ratio

FE1

—

CE = 5 V, I C = 1A

DC current transfer ratio

FE2

3.5

—

6.5

CE = 5 V, I C = 6A

Collector to emitter saturation

voltage

CE(sat)

——

C =

6A, I

B = 1.6A

Base to emitter saturation

voltage

BE(sat)

—

1.5

C =

6A, I

B = 1.6A

Fall time

—

0.2

0.4

µsI

CP = 5A, IB1 = 1.6A

H = 31.5kHz

Fall time

—

0.15

—

µsI

CP = 5A, IB1 = 1.3A

H = 64kHz

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