BAS16WS datasheet(1/3 Pages) DGNJDZ

номер детали	BAS16WS

подробное описание детали	Fast switching diode

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производитель	DGNJDZ [Nanjing International Group Co]

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BAS16WS

Silicon Epitaxial Planar Switching Diode

Features

• Fast switching diode

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Reverse Voltage

VR

75

V

Peak Reverse Voltage

VRM

100

V

Forward Current (Continuous)

IF

250

mA

Non-repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 ms

at t = 1 μs

IFSM

0.5

1

2

A

Power Dissipation

Ptot

200

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

Tstg

- 65 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Max.

Unit

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 50 mA

at IF = 150 mA

VF

0.715

0.855

1

1.25

V

Reverse Leakage Current

at VR = 75 V

at VR = 25 V, TJ = 150 OC

at VR = 75 V, TJ = 150 OC

IR

1

30

50

µA

Diode Capacitance

at VR = 0 V, f = 1 MHz

Ctot

2

pF

Reverse Recovery Time

at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω

trr

6

ns

Anode

2

Top View

Marking Code: "W2"

Simplified outline SOD-323 and symbol

1

2

PINNING

1

Cathode

DESCRIPTION

W2

Аналогичный номер детали - BAS16WS

производитель	номер детали	датащи	подробное описание детали
Won-Top Electronics	BAS16WS	40Kb / 3P	SURFACE MOUNT FAST SWITCHING DIODE
General Semiconductor	BAS16WS	45Kb / 2P	SMALL SIGNAL DIODES
TAITRON Components Inco...	BAS16WS	173Kb / 4P	Three Terminals SMD Switching Diode
SEMTECH ELECTRONICS LTD...	BAS16WS	294Kb / 3P	SILICON EPITAXIAL PLANAR SWITCHING DIODE
SynSemi, Inc.	BAS16WS	38Kb / 2P	SMALL SIGNAL DIODE

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BAS16WS датащи(PDF) 1 Page - Nanjing International Group Co

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