| поискавой системы для электроныых деталей |
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2N6761 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6761 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2N6761 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·I DSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 4.0 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Аналогичный номер детали - 2N6761 |
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Аналогичное описание - 2N6761 |
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