2SA1606 datasheet(1/2 Pages) ISC

номер детали	2SA1606

подробное описание детали	Complement to Type 2SC4159

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SA1606

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= -160V (Min)

·Large Current Capacity

·Complement to Type 2SC4159

APPLICATIONS

·Designed for high-voltage switching, AF power amplifier,

100W output predrivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-6.0

V

IC

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

-3

A

PC

Total Power Dissipation

@ TC=25℃

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SA1606

производитель	номер детали	датащи	подробное описание детали
Sanyo Semicon Device	2SA1606	99Kb / 3P	High-Voltage Switching,AF 100W Driver Applications
New Jersey Semi-Conduct...	2SA1606	184Kb / 2P	Silicon PNP Power Transistor

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Аналогичное описание - 2SA1606

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	2SA1265	111Kb / 2P	Complement to Type 2SC3182
	2SA1263	111Kb / 2P	Complement to Type 2SC3180
	2SA1964	105Kb / 2P	Complement to Type 2SC5248
	2SB1038	111Kb / 2P	Complement to Type 2SD1310
	2SB989	110Kb / 2P	Complement to Type 2SD1352
	2SB692	90Kb / 2P	Complement to Type 2SD728
	2SB1031	88Kb / 2P	Complement to Type 2SD1435
	2SB612	80Kb / 2P	Complement to Type 2SD582
	2SC3789	185Kb / 2P	Complement to Type 2SA1479
	2SD1683	141Kb / 2P	Complement to Type 2SB1143

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